Electronics, Vol. 14, Pages 3737: A Novel Low-Power Ternary 6T SRAM Design Using XNOR-Based CIM Architecture in Advanced FinFET Technologies

Electronics doi: 10.3390/electronics14183737

Authors:
Adnan A. Patel
Sohan Sai Dasaraju
Achyuth Gundrapally
Kyuwon Ken Choi

The increasing demand for high-performance and low-power hardware in artificial intelligence (AI) applications—such as speech recognition, facial recognition, and object detection—has driven the exploration of advanced memory designs. Convolutional neural networks (CNNs) and deep neural networks (DNNs) require intensive computational resources, leading to significant challenges in terms of memory access time and power consumption. Compute-in-Memory (CIM) architectures have emerged as an alternative by executing computations directly within memory arrays, thereby reducing the expensive data transfer between memory and processor units. In this work, we present a 6T SRAM-based CIM architecture implemented using FinFET technology, aiming to reduce both power consumption and access delay. We explore and simulate three different SRAM cell structures—PLNA (P-Latch N-Access), NLPA (N-Latch P-Access), and SE (Single-Ended)—to assess their suitability for CIM operations. Compared to a reference 10T XNOR-based CIM design, our results show that the proposed structures achieve an average power consumption approximately 70% lower, along with significant delay reduction, without compromising functional integrity. A comparative analysis is presented to highlight the trade-offs between the three configurations, providing insights into their potential applications in low-power AI accelerator design.

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Adnan A. Patel www.mdpi.com