Inorganics, Vol. 13, Pages 126: Uncooled Microbolometers Based on Nitrogen-Doped Hydrogenated Amorphous Silicon-Germanium (a-SiGe:H,N)

Inorganics doi: 10.3390/inorganics13040126

Authors:
Oscar Velandia
Alfonso Torres
Alfredo Morales
Luis Hernández
Alberto Luna
Karim Monfil
Javier Flores
Gustavo M. Minquiz
Ricardo Jiménez
Mario Moreno

An uncooled microbolometer is a thermal sensor consisting of a membrane suspended from the substrate to provide thermal insulation. Typically, the membrane is composed of a stack of three films integrated by a supporting film, an IR sensing film, and an IR absorbing film. However, the above increases the thickness of the device and affects its mechanical stability and thermal mass, thereby reducing its performance. One solution is to use a single film as a membrane with both IR sensing and IR absorbing properties. In this regard, this work presents the fabrication and evaluation of uncooled microbolometers using nitrogen-doped hydrogenated amorphous silicon-germanium (a-SiGe:H,N) as a single IR-absorber/IR sensing membrane. The films were deposited via low frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) at 200 °C. Three microbolometer configurations were fabricated using a-SiGe:H,N films deposited from a SiH4, GeH4, N2, and H2 gas mixture with different SiH4 and GeH4 flow rates and, consequently, with different properties, such as temperature coefficient of resistance (TCR) and conductivity at room temperature. The microbolometer that exhibited the best performance achieved a voltage responsivity of 7.26 × 105 V/W and a NETD of 22.35 mK at 140 Hz, which is comparable to state-of-the-art uncooled infrared (IR) sensors. These results confirm that the optimization of the deposition parameters of the a-SiGe:H,N films significantly affects the microbolometers final performance, enabling an optimal balance between thermal sensitivity (TCR) and conductivity.

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