Micromachines, Vol. 16, Pages 824: Encapsulation Process and Dynamic Characterization of SiC Half-Bridge Power Module: Electro-Thermal Co-Design and Experimental Validation

Micromachines doi: 10.3390/mi16070824

Authors:
Kaida Cai
Jing Xiao
Xingwei Su
Qiuhui Tang
Huayuan Deng

Silicon carbide (SiC) half-bridge power modules are widely utilized in new energy power generation, electric vehicles, and industrial power supplies. To address the research gap in collaborative validation between electro-thermal coupling models and process reliability, this paper proposes a closed-loop methodology of “design-simulation-process-validation”. This approach integrates in-depth electro-thermal simulation (LTspice XVII/COMSOL Multiphysics 6.3) with micro/nano-packaging processes (sintering/bonding). Firstly, a multifunctional double-pulse test board was designed for the dynamic characterization of SiC devices. LTspice simulations revealed the switching characteristics under an 800 V operating condition. Subsequently, a thermal simulation model was constructed in COMSOL to quantify the module junction temperature gradient (25 °C → 80 °C). Key process parameters affecting reliability were then quantified, including conductive adhesive sintering (S820-F680, 39.3 W/m·K), high-temperature baking at 175 °C, and aluminum wire bonding (15 mil wire diameter and 500 mW ultrasonic power/500 g bonding force). Finally, a double-pulse dynamic test platform was established to capture switching transient characteristics. Experimental results demonstrated the following: (1) The packaged module successfully passed the 800 V high-voltage validation. Measured drain current (4.62 A) exhibited an error of <0.65% compared to the simulated value (4.65 A). (2) The simulated junction temperature (80 °C) was significantly below the safety threshold (175 °C). (3) Microscopic examination using a Leica IVesta 3 microscope (55× magnification) confirmed the absence of voids at the sintering and bonding interfaces. (4) Frequency-dependent dynamic characterization revealed a 6 nH parasitic inductance via Ansys Q3D 2025 R1 simulation, with experimental validation at 8.3 nH through double-pulse testing. Thermal evaluations up to 200 kHz indicated 109 °C peak temperature (below 175 °C datasheet limit) and low switching losses. This work provides a critical process benchmark for the micro/nano-manufacturing of high-density SiC modules.

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